[D-1] Ga2O3 Power Devices | 2024 International Conference on Solid State Devices and Materials

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Session Details

Oral Presentation04: Power / High‐speed Devices and Materials

[D-1]Ga2O3 Power Devices

Mon. Sep 2, 2024 2:30 PM - 4:00 PM JST
Mon. Sep 2, 2024 5:30 AM - 7:00 AM UTC

Room D (Medium Hall)(2nd Floor)

Session Chair: Kohei Sasaki (Novel Crystal Technology, Inc.), Masashi Kato (Nagoya Inst. of Technology)

2:30 PM - 3:00 PM JST(5:30 AM - 6:00 AM UTC)Invited

[D-1-01 (Invited)]Pairing Ga₂O₃ with p-NiO produces robust power diodes for harsh environments

Hehe Gong1,2、Feng Zhou1、Ming Xiao2、Yuhao Zhang2、〇Jiandong Ye1 (1. Nanjing University (China)、2. Virginia Tech (United States of America))

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[D-1-02]Demonstration of β-(Al_0.17Ga_0.83)₂O₃ metal-semiconductor field-effect transistors with low contacts resistance and high drain current density

〇Ryo Morita¹, Aboulaye Traore^1,2, Hironori Okumura¹, Fenfen Fenda Florena¹, Yun Jia¹, Takeaki Sakurai¹ (1. Univ. of Tsukuba (Japan), 2. J-FAST (Japan))

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[D-1-03]Optimization of Characteristics in NiO_x/β-Ga₂O₃ Heterojunction Diodes with Surface Treatment

〇Dinghe Liu¹, Zeyulin Zhang¹, Hao Chen¹, Dazheng Chen¹, Chunfu Zhang¹, Yue Hao¹ (1. Xidian Univ. (China))

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[D-1-04]Characterization of trap states in β-(Al_xGa_1-x)₂O₃/Ga₂O₃modulation-doped field effect transistors by deep level transient spectroscopy

〇Yun Jia¹, Fenfen Fenda Florena¹, Ryo Morita¹, Aboulaye Traoré^1,2, Hironori Okumura¹, Takeaki Sakurai¹ (1. Univ. of Tsukuba (Japan), 2. Japanese-French Lab. for Semiconductor Physics and Technology (Japan))

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[D-1-05]β-Ga₂O₃ Schottky Barrier Diodes with Surface Etching and Piranha Solution Pre-treatment: Achieving Near-ideal Forward and Reverse Characteristics

Haodong Hu^1,2, Yibo Wang^1,2, Xiaole Jia¹, 〇Chenyu Liu¹, Cizhe Fang^1,2, Xiaoxi Li^1,2, Bochang Li^1,2, Zhengdong Luo^1,2, Yan Liu^1,2, Yue Hao^1,2, Genquan Han^1,2 (1. School of Microelectronics, Xidian Univ. (China), 2. Hangzhou Inst. of Tech., Xidian Univ. (China))

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Session Details

[D-1]Ga2O3 Power Devices

[D-1-01 (Invited)]Pairing Ga2O3 with p-NiO produces robust power diodes for harsh environments

[D-1-02]Demonstration of β-(Al0.17Ga0.83)2O3 metal-semiconductor field-effect transistors with low contacts resistance and high drain current density

[D-1-03]Optimization of Characteristics in NiOx/β-Ga2O3 Heterojunction Diodes with Surface Treatment

[D-1-04]Characterization of trap states in β-(AlxGa1-x)2O3/Ga2O3 modulation-doped field effect transistors by deep level transient spectroscopy

[D-1-05]β-Ga2O3 Schottky Barrier Diodes with Surface Etching and Piranha Solution Pre-treatment: Achieving Near-ideal Forward and Reverse Characteristics

[D-1-01 (Invited)]Pairing Ga₂O₃ with p-NiO produces robust power diodes for harsh environments

[D-1-02]Demonstration of β-(Al_0.17Ga_0.83)₂O₃ metal-semiconductor field-effect transistors with low contacts resistance and high drain current density

[D-1-03]Optimization of Characteristics in NiO_x/β-Ga₂O₃ Heterojunction Diodes with Surface Treatment

[D-1-04]Characterization of trap states in β-(Al_xGa_1-x)₂O₃/Ga₂O₃modulation-doped field effect transistors by deep level transient spectroscopy

[D-1-05]β-Ga₂O₃ Schottky Barrier Diodes with Surface Etching and Piranha Solution Pre-treatment: Achieving Near-ideal Forward and Reverse Characteristics