[D-1] Ga2O3 Power Devices

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[D-1-04] Characterization of trap states in β-(Al_xGa_1-x)₂O₃/Ga₂O₃ modulation-doped field effect transistors by deep level transient spectroscopy

〇Yun Jia¹, Fenfen Fenda Florena¹, Ryo Morita¹, Aboulaye Traoré^1,2, Hironori Okumura¹, Takeaki Sakurai¹ (1. Univ. of Tsukuba (Japan), 2. Japanese-French Lab. for Semiconductor Physics and Technology (Japan))

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