Presentation Information
[D-2-02]Improvement of the Contact Resistance and Subthreshold Swing of the (001) C-H Diamond MOSFETs with Heavily Boron Doped Layer
〇Ryosuke Yamamoto1, Kento Narita1, Kosuke Ota1,2, Nobutaka Oi1,2, Atsushi Hiraiwa1, Tatsuya Fujishima2, Hiroshi Kawarada1,2,3 (1. Waseda Univ. (Japan), 2. Power Diamond Systems, Inc. (Japan), 3. Kagami Memorial Research Institute for Materials Science and Technology (Japan))