[D-2] Diamond Devices

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[D-2-02] Improvement of the Contact Resistance and Subthreshold Swing of the (001) C-H Diamond MOSFETs with Heavily Boron Doped Layer

〇Ryosuke Yamamoto¹, Kento Narita¹, Kosuke Ota^1,2, Nobutaka Oi^1,2, Atsushi Hiraiwa¹, Tatsuya Fujishima², Hiroshi Kawarada^1,2,3 (1. Waseda Univ. (Japan), 2. Power Diamond Systems, Inc. (Japan), 3. Kagami Memorial Research Institute for Materials Science and Technology (Japan))

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