[D-2] Diamond Devices | 2024 International Conference on Solid State Devices and Materials

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Session Details

Oral Presentation04: Power / High‐speed Devices and Materials

[D-2]Diamond Devices

Mon. Sep 2, 2024 4:30 PM - 5:30 PM JST
Mon. Sep 2, 2024 7:30 AM - 8:30 AM UTC

Room D (Medium Hall)(2nd Floor)

Session Chair: Norio Tokuda (Kanazawa Univ.), Masashi Kato (Nagoya Inst. of Technology)

4:30 PM - 5:00 PM JST(7:30 AM - 8:00 AM UTC)Invited

[D-2-01 (Invited)]High Power and High Frequency Diamond Field Effect Transistors

〇Hiroshi Kawarada^1,2, Ken Kudara¹, Masakazu Arai¹, Akira Takahashi¹, Kousuke Ota^1,2, Tatsuya Fujishima² (1. Waseda Univ. (Japan), 2. Power Diamond Systems (Japan))

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[D-2-02]Improvement of the Contact Resistance and Subthreshold Swing of the (001) C-H Diamond MOSFETs with Heavily Boron Doped Layer

〇Ryosuke Yamamoto¹, Kento Narita¹, Kosuke Ota^1,2, Nobutaka Oi^1,2, Atsushi Hiraiwa¹, Tatsuya Fujishima², Hiroshi Kawarada^1,2,3 (1. Waseda Univ. (Japan), 2. Power Diamond Systems, Inc. (Japan), 3. Kagami Memorial Research Institute for Materials Science and Technology (Japan))

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)

[D-2-03]Diamond Photoconductive Switch with Nitrogen Doping to Regulate Transient Response and its Microwave Applications

〇Hanpeng Zhang¹, Min Xie¹, Jingliang Liu², Xiangjin Chen², Xiaoli Lu¹, Xiaohua Ma¹, Yue Hao¹ (1. Xidian Univ. (China), 2. The 13st Inst. of China Electronics Tech. Group Corp. (China))

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