[D-3] Si-related Devices

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[D-3-01] The Reduction of Reverse Recovery Current in RC-IGBT by Controlling Hole Injection from IGBT Region with Partially Extended N-emitter

〇Daiki Yoshikawa¹, Kazutoshi Nakamura¹, Yusuke Kawaguchi¹, Shoko Hanagata¹, Shunta Murai¹, Norio Yasuhara¹, Kenichi Matsushita¹, Takeshi Suwa¹, Keiko Kawamura¹, Seiji Inumiya¹ (1. Toshiba Electronic Devices & Storage Corporation (Japan))

DOI:

https://doi.org/10.7567/SSDM.2024.D-3-01

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