[D-4] High-speed Devices

10:45 AM - 11:15 AM JST(1:45 AM - 2:15 AM UTC)Invited

[D-4-01 (Invited)] Grating Gate GaN/AlGaN Plasmonic FETs for THz Optoelectronics Devices

〇Wojciech Knap^1,2、Pavlo Sai^1,2、Maksym Dub^1,2、Vadym Korotyeyev³ (1. CENTERA Warsaw Univ. of Technology Warsaw (Poland)、2. UNIPRESS Polish Academy of Sciences (Poland)、3. V. Ye. Lashkaryov Institute of Semiconductor Physics, NASU, Kyiv, Ukraine (Ukraine))

DOI:

https://doi.org/10.7567/SSDM.2024.D-4-01

Password required to view