2024 International Conference on Solid State Devices and Materials
Sep 1 - Sep 4, 2024Arcrea HIMEJI
2024 International Conference on Solid State Devices and Materials
Sep 1 - Sep 4, 2024Arcrea HIMEJI
[D-4-01 (Invited)]Grating Gate GaN/AlGaN Plasmonic FETs for THz Optoelectronics Devices
〇Wojciech Knap1,2、Pavlo Sai1,2、Maksym Dub1,2、Vadym Korotyeyev3(1. CENTERA Warsaw Univ. of Technology Warsaw (Poland)、2. UNIPRESS Polish Academy of Sciences (Poland)、3. V. Ye. Lashkaryov Institute of Semiconductor Physics, NASU, Kyiv, Ukraine (Ukraine))
We present an overview of recent experimental and theoretical efforts towards understanding if and how plasmonic nanostructures oscillating at THz frequencies can be electrically driven towards regime of THz radiation amplification or generation. The work paves the way towards development of innovative THz FETs based optoelectronics devices.