Session Details
[D-4]High-speed Devices
Tue. Sep 3, 2024 10:45 AM - 12:00 PM JST
Tue. Sep 3, 2024 1:45 AM - 3:00 AM UTC
Tue. Sep 3, 2024 1:45 AM - 3:00 AM UTC
Room D (Medium Hall)(2nd Floor)
Session Chair: Akira Satou (Tohoku Univ.), Taketomo Sato (Hokkaido Univ.)
[D-4-01 (Invited)]Grating Gate GaN/AlGaN Plasmonic FETs for THz Optoelectronics Devices
〇Wojciech Knap1,2、Pavlo Sai1,2、Maksym Dub1,2、Vadym Korotyeyev3 (1. CENTERA Warsaw Univ. of Technology Warsaw (Poland)、2. UNIPRESS Polish Academy of Sciences (Poland)、3. V. Ye. Lashkaryov Institute of Semiconductor Physics, NASU, Kyiv, Ukraine (Ukraine))
[D-4-02]Structure dependence of output power for a resonant-tunneling-diode terahertz oscillator integrated with rectangular cavity resonator
Ryuya Saito1, Hiroki Tanaka1, Feifan Han1, 〇Safumi Suzuki1 (1. Tokyo Tech (Japan))
[D-4-03]Adopting Thin Channel Layer to Achieve High Performance in InAlGaN/GaN HEMT
〇You-Chen WENG1, Chee-Hao Lu1, Chih-Yi Yang1, Chin-Han Chung1, Ching-Ting Lee2, Fu-Ching Tung3, Shih-Hsiang Lai3, Chan-Yuen Chang4, Chien-Wei Chen4, Hung-Wei Yu1, Yi edward Chang1,2 (1. National Yang Ming Chiao Tung University (Taiwan), 2. National Cheng Kung University (Taiwan), 3. Industrial Technology Research Institute (Taiwan), 4. Taiwan Instrument Research Institute (Taiwan))
[D-4-04]Enhancement of RF Characteristic in T-gate AlGaN/GaN HEMTs with AlGaN Back Barrier
〇Hsin Chu Chen1, Po Tsung Tu2,3, Chang Yan Hsieh3, Hui-Yu Chen3, Po Chun Yeh3, Hao Chung Kuo2,4 (1. Institute of Advanced Semiconductor Packaging and Testing, National Sun Yat-sen University (Taiwan), 2. Department of Photonics and Institute of Electro-Optical Engineering, National Yang Ming Chiao Tung University (Taiwan), 3. Electronic and Optoelectronic System Research Laboratories, Industrial Technology Research Institute (Taiwan), 4. Semiconductor Research Center, Hon Hai Research Institute (Taiwan))