Presentation Information
[D-4-04]Enhancement of RF Characteristic in T-gate AlGaN/GaN HEMTs with AlGaN Back Barrier
〇Hsin Chu Chen1, Po Tsung Tu2,3, Chang Yan Hsieh3, Hui-Yu Chen3, Po Chun Yeh3, Hao Chung Kuo2,4 (1. Institute of Advanced Semiconductor Packaging and Testing, National Sun Yat-sen University (Taiwan), 2. Department of Photonics and Institute of Electro-Optical Engineering, National Yang Ming Chiao Tung University (Taiwan), 3. Electronic and Optoelectronic System Research Laboratories, Industrial Technology Research Institute (Taiwan), 4. Semiconductor Research Center, Hon Hai Research Institute (Taiwan))