[D-5] SiC MOS Interfaces

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[D-5-02] Understanding of the effect of thermodynamic conditions on 4H-SiC surface nitridation kinetics based on modeling of surface nitridation kinetics

〇Tianlin Yang¹, Takashi Onaya², Koji Kita^1,2 (1. Department of Materials Engineering, The University of Tokyo (Japan), 2. Department of Advanced Materials Science, The University of Tokyo (Japan))

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