2024 International Conference on Solid State Devices and Materials
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Session Details

Oral Presentation04: Power / High‐speed Devices and Materials

[D-5]SiC MOS Interfaces

Wed. Sep 4, 2024 9:00 AM - 10:30 AM JST
Wed. Sep 4, 2024 12:00 AM - 1:30 AM UTC
Room D (Medium Hall)(2nd Floor)
Session Chair: Tomoya Ono (Kobe Univ.), Katsuhiro Kutsuki (Toyota Central R&D Labs., Inc.)
9:00 AM - 9:30 AM JST(12:00 AM - 12:30 AM UTC)Invited

[D-5-01 (Invited)]Comprehensive Research on Nitrided SiO2/4H-SiC Interfaces

〇Heiji Watanabe1, Takuma Kobayashi1 (1. Osaka Univ. (Japan))
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[D-5-02]Understanding of the effect of thermodynamic conditions on 4H-SiC surface nitridation kinetics based on modeling of surface nitridation kinetics

〇Tianlin Yang1, Takashi Onaya2, Koji Kita1,2 (1. Department of Materials Engineering, The University of Tokyo (Japan), 2. Department of Advanced Materials Science, The University of Tokyo (Japan))
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[D-5-03]Transient current measurements and analysis in charge pump method for SiC p-MOSFETs

〇Takuya Hoshii1, Kotaro Ano1, Takashi Yoda2, Takayuki Ohba2, Kuniyuki Kakushima1 (1. School of Eng., Tokyo Tech (Japan), 2. WOW Alliance, Tokyo Tech (Japan))
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[D-5-04]Impact of Interface Structure on Electronic States in 4H-SiC Inversion Layer

〇Sachika Nagamizo1, Hajime Tanaka1, Nobuya Mori1 (1. Osaka Univ. (Japan))
10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[D-5-05]DFT study on relation between electronic structure and areal N atom densityat 4H-SiC/SiO2 after NO annealing

〇Nahoto Funaki1, Kosei Sugiyama1, Mitsuharu Uemoto1, Tomoya Ono1 (1. Grad. Schl. Eng., Kobe Univ. (Japan))
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