[D-5] SiC MOS Interfaces

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[D-5-03] Transient current measurements and analysis in charge pump method for SiC p-MOSFETs

〇Takuya Hoshii¹, Kotaro Ano¹, Takashi Yoda², Takayuki Ohba², Kuniyuki Kakushima¹ (1. School of Eng., Tokyo Tech (Japan), 2. WOW Alliance, Tokyo Tech (Japan))

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