[D-5] SiC MOS Interfaces

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[D-5-05] DFT study on relation between electronic structure and areal N atom densityat 4H-SiC/SiO₂ after NO annealing

〇Nahoto Funaki¹, Kosei Sugiyama¹, Mitsuharu Uemoto¹, Tomoya Ono¹ (1. Grad. Schl. Eng., Kobe Univ. (Japan))

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