[D-6] SiC Power Devices

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[D-6-02] Double-Implanted 4H-SiC Superjunction UMOSFET without Bipolar Degradation

〇Kensuke Takenaka¹, Takeshi Tawara^1,2, Syunki Narita², Shinsuke Harada¹ (1. AIST (Japan), 2. Fuji Electric Co., Ltd. (Japan))

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