[D-6] SiC Power Devices

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[D-6-02] Double-Implanted 4H-SiC Superjunction UMOSFET without Bipolar Degradation

〇Kensuke Takenaka¹, Takeshi Tawara^1,2, Syunki Narita², Shinsuke Harada¹ (1. AIST (Japan), 2. Fuji Electric Co., Ltd. (Japan))

DOI:

https://doi.org/10.7567/SSDM.2024.D-6-02

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