2024 International Conference on Solid State Devices and Materials
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Session Details

Oral Presentation04: Power / High‐speed Devices and Materials

[D-6]SiC Power Devices

Wed. Sep 4, 2024 11:00 AM - 12:15 PM JST
Wed. Sep 4, 2024 2:00 AM - 3:15 AM UTC
Room D (Medium Hall)(2nd Floor)
Session Chair: Shinsuke Harada (AIST), Kohei Adachi (Mitsubishi Electric)
11:00 AM - 11:30 AM JST(2:00 AM - 2:30 AM UTC)Invited

[D-6-01 (Invited)]Ultra-high Voltage SiC Bipolar Devices for Green Infrastructure

〇Naoki Watanabe1, Haruka Shimizu1, Akio Shima1 (1. Hitachi, Ltd. (Japan))
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[D-6-02]Double-Implanted 4H-SiC Superjunction UMOSFET without Bipolar Degradation

〇Kensuke Takenaka1, Takeshi Tawara1,2, Syunki Narita2, Shinsuke Harada1 (1. AIST (Japan), 2. Fuji Electric Co., Ltd. (Japan))
11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[D-6-03]A Study of Electrical Characteristics of State-of-the-Art 1.2-kV SiC Planar and Trench MOSFETs

〇Kazuhiro Suzuki1, Hiroshi Yano1, Noriyuki Iwamuro1 (1. Univ. of Tsukuba (Japan))
12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)Late News

[D-6-04 (Late News)]Detection of carbon-related defects in near-surface region of SiC induced by low-oxygen-partial-pressure annealing

〇Chuyang Lyu1, Takashi Onaya1, Koji Kita1 (1. The University of Tokyo (Japan))
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