[D-6] SiC Power Devices

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[D-6-03] A Study of Electrical Characteristics of State-of-the-Art 1.2-kV SiC Planar and Trench MOSFETs

〇Kazuhiro Suzuki¹, Hiroshi Yano¹, Noriyuki Iwamuro¹ (1. Univ. of Tsukuba (Japan))

DOI:

https://doi.org/10.7567/SSDM.2024.D-6-03

Password required to view