Presentation Information
[D-7-01 (Invited)]Engineering of Channel Mobility and Threshold Voltage in AlSiO/AlN/p-type GaN Metal–Oxide–Semiconductor Field-Effect Transistors
〇Tetsuo Narita1, Kenji Ito1, Masakazu Kanechika2, Hiroko Iguchi1, Shiro Iwasaki1, Daigo Kikuta1, Emi Kano2, Nobuyuki Ikarashi2, Kazuyoshi Tomita2, Masahiro Horita2, Jun Suda2, Tetsu Kachi2 (1. Toyota Central R&D Labs. (Japan), 2. Nagoya Univ. (Japan))