2024 International Conference on Solid State Devices and Materials
Advanced Search

Session Details

Oral Presentation04: Power / High‐speed Devices and Materials

[D-7]GaN Power Devices

Wed. Sep 4, 2024 1:30 PM - 2:30 PM JST
Wed. Sep 4, 2024 4:30 AM - 5:30 AM UTC
Room D (Medium Hall)(2nd Floor)
Session Chair: Shigeyoshi Usami (Osaka Univ.), Shinya Takashima (Fuji electric)
1:30 PM - 2:00 PM JST(4:30 AM - 5:00 AM UTC)Invited

[D-7-01 (Invited)]Engineering of Channel Mobility and Threshold Voltage in AlSiO/AlN/p-type GaN Metal–Oxide–Semiconductor Field-Effect Transistors

〇Tetsuo Narita1, Kenji Ito1, Masakazu Kanechika2, Hiroko Iguchi1, Shiro Iwasaki1, Daigo Kikuta1, Emi Kano2, Nobuyuki Ikarashi2, Kazuyoshi Tomita2, Masahiro Horita2, Jun Suda2, Tetsu Kachi2 (1. Toyota Central R&D Labs. (Japan), 2. Nagoya Univ. (Japan))
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[D-7-02]Metal/Al2O3/NiOx/AlGaN/GaN MIS devices with NiOx interfacial layer: Threshold voltage and interface trap density in comparison with metal/Al2O3/AlGaN/GaN MIS devices

〇Yuchen Deng1, Jieensi Gelan1, Kazuya Uryu1,2, Toshi-kazu Suzuki1 (1. Japan Advanced Institute of Science and Technology (Japan), 2. Advantest Laboratories Ltd. (Japan))
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[D-7-03]Effect of Substrate Carrier Concentration on Conductivity Modulation in GaN

〇Shigeyoshi Usami1, Hiroshi Ohta2, Hirotaka Watanabe3, Junichi Takino4, Masayuki Imanishi1, Tomoaki Sumi4, Shugo Nitta3, Yoshio Okayama4, Yoshio Honda3, Tomoyoshi Mishima2, Hiroshi Amano3, Yusuke Mori1 (1. Osaka Univ. (Japan), 2. Hosei Univ. (Japan), 3. IMaSS, Nagoya Univ. (Japan), 4. Panasonic Holdings Corp. (Japan))
Back to Category List