[D-7] GaN Power Devices

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[D-7-02] Metal/Al₂O₃/NiO_x/AlGaN/GaN MIS devices with NiO_x interfacial layer: Threshold voltage and interface trap density in comparison with metal/Al₂O₃/AlGaN/GaN MIS devices

〇Yuchen Deng¹, Jieensi Gelan¹, Kazuya Uryu^1,2, Toshi-kazu Suzuki¹ (1. Japan Advanced Institute of Science and Technology (Japan), 2. Advantest Laboratories Ltd. (Japan))

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