[D-8] Processes and Characterization

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[D-8-03] Comparison of Single Shockley-Type Stacking Fault Expansion Rates in 4H-SiC under Ultraviolet Illumination after Hydrogen or Fluorine Ion Implantation

〇Johji Nishio¹, Chiharu Ota¹, Ryosuke Iijima¹ (1. Toshiba Corp. (Japan))

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