Presentation Information

[D-8-04]Dynamics of Hopping of Surface Trapped Electrons on GaN High Electron Mobility Transistors Observed by Operando X-ray Photoelectron Nanospectroscopy

Keiichi Omika1, Yasunori Tateno2, Tsuyoshi Kouchi2, Naoka Nagamura3, Koji Horiba4, Masaharu Oshima5, Maki Suemitsu1, 〇Hirokazu Fukidome1 (1. Research Institute of Electrical Communication, Tohoku University (Japan), 2. Sumitomo Electric Industries, Ltd. (Japan), 3. National Institute for Materials Science (Japan), 4. Photon Factory, High Energy Accelerator Research Organization (Japan), 5. Institute for Solid State Physics, The University of Tokyo (Japan))

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