[H-2] Characterization-I

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[H-2-04] Prediction of Edge Structure Dependence on Carrier Mobility in SiC₆ and GeC₆ Nanoribbons by First-Principles Calculations

〇kota iwaki¹, yoshiyuki egami² (1. Grad. Sch. Eng., Hokkaido Univ. (Japan), 2. Fac. Eng., Hokkaido Univ. (Japan))

DOI:

https://doi.org/10.7567/SSDM.2024.H-2-04

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