[H-2] Characterization-I | 2024 International Conference on Solid State Devices and Materials

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Session Details

Oral Presentation08: Low Dimensional Devices and Materials

[H-2]Characterization-I

Mon. Sep 2, 2024 4:15 PM - 5:30 PM JST
Mon. Sep 2, 2024 7:15 AM - 8:30 AM UTC

Room H (Small Hall)(2nd Floor)

Session Chair: Takuo Sasaki (QST), Yusuke Hoshi (Tokyo City Univ.)

4:15 PM - 4:45 PM JST(7:15 AM - 7:45 AM UTC)Invited

[H-2-01 (Invited)]Photonic III-V semiconductor nanowires on Si toward wafer scale functionalization

〇Fumitaro Ishikawa¹ (1. Hokkaido Univ. (Japan))

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[H-2-02]A Monte Carlo method to reproduce anisotropic size effect on electrical resistivity in single-crystalline nanoscale metallic wires

〇Takashi Kurusu¹, Hiroyoshi Tanimoto¹, Nobutoshi Aoki¹, Masaru Kito¹, Kazuya Ohuchi¹ (1. Kioxia Corp. (Japan))

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[H-2-03]The carrier injection characteristic of AC-driven monolayer WSe₂ light transistor

〇Chiao-Yun Chang^1,2, Ya-Hui Chang^2,3, Yen-Shou Lin^2,3, Zheng-Zhe Chen^2,4, Konthoujam James Singh², Hsiang-Ting Lin², Shih-Yen Lin^2,4, Hao-Chung Kuo³, Min-Hsiung Shih^2,3,5 (1. National Taiwan Ocean University (Taiwan), 2. Academia Sinica (Taiwan), 3. National Yang Ming Chiao Tung University (Taiwan), 4. National Taiwan University (Taiwan), 5. National Sun Yat-sen University (Taiwan))

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)

[H-2-04]Prediction of Edge Structure Dependence on Carrier Mobility in SiC₆ and GeC₆ Nanoribbons by First-Principles Calculations

〇kota iwaki¹, yoshiyuki egami² (1. Grad. Sch. Eng., Hokkaido Univ. (Japan), 2. Fac. Eng., Hokkaido Univ. (Japan))

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