2024 International Conference on Solid State Devices and Materials
Sep 1 - Sep 4, 2024Arcrea HIMEJI
2024 International Conference on Solid State Devices and Materials
Sep 1 - Sep 4, 2024Arcrea HIMEJI
[H-3-02]Orthogonal Growth of a Few-Layer WS2 Channel and an Graphene to implement the atomic length gate and the atomically thinned channel simultaneously
Hideaki Sugino1, Hirai Tanaka1, Kazuki Yonekubo1, Fuminori Sasaki1, Toshifumi Irisawa2, Takeo Matsuki2, Daisuke Ohori3, Kazuhiko Endo3, Issei Watanabe4, 〇Hirokazu Fukidome1(1. Research Institute of Electrical Communication, Tohoku University (Japan), 2. National Institute of Advanced Science and Technology (Japan), 3. Institute of Fluid Science, Tohoku University (Japan), 4. National Institute of Information and Communications Technology (Japan))
To evade the short channel effects, both atomically thinning of the channel and the atomically shortening of the gate in the next generation transistors should be achieved. Here we demonstrate the orthogonal growth of WS2 and graphene each other for constructing the gate stack structure to define the atomically shortened graphene channel with the atomically thinned WS2 channel, without using the so-called transfer method. With the proper arrangement of device components, such as minimizing the distance between source and drain electrodes, our gate stack structure thus formed can contribute to the implementation of high-speed and large output transistors, superior to Si-based transistors.