Presentation Information
[H-3-02]Orthogonal Growth of a Few-Layer WS2 Channel and an Graphene to implement the atomic length gate and the atomically thinned channel simultaneously
Hideaki Sugino1, Hirai Tanaka1, Kazuki Yonekubo1, Fuminori Sasaki1, Toshifumi Irisawa2, Takeo Matsuki2, Daisuke Ohori3, Kazuhiko Endo3, Issei Watanabe4, 〇Hirokazu Fukidome1 (1. Research Institute of Electrical Communication, Tohoku University (Japan), 2. National Institute of Advanced Science and Technology (Japan), 3. Institute of Fluid Science, Tohoku University (Japan), 4. National Institute of Information and Communications Technology (Japan))