2024 International Conference on Solid State Devices and Materials
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Session Details

Oral Presentation08: Low Dimensional Devices and Materials

[H-3]Growth

Tue. Sep 3, 2024 9:00 AM - 10:00 AM JST
Tue. Sep 3, 2024 12:00 AM - 1:00 AM UTC
Room H (Small Hall)(2nd Floor)
Session Chair: Masafumi Jo (RIKEN), Takayuki Arie (Osaka Metropolitan Univ.)
9:00 AM - 9:30 AM JST(12:00 AM - 12:30 AM UTC)Invited

[H-3-01]Withdrawn

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[H-3-02]Orthogonal Growth of a Few-Layer WS2 Channel and an Graphene to implement the atomic length gate and the atomically thinned channel simultaneously

Hideaki Sugino1, Hirai Tanaka1, Kazuki Yonekubo1, Fuminori Sasaki1, Toshifumi Irisawa2, Takeo Matsuki2, Daisuke Ohori3, Kazuhiko Endo3, Issei Watanabe4, 〇Hirokazu Fukidome1 (1. Research Institute of Electrical Communication, Tohoku University (Japan), 2. National Institute of Advanced Science and Technology (Japan), 3. Institute of Fluid Science, Tohoku University (Japan), 4. National Institute of Information and Communications Technology (Japan))
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[H-3-03]PVD-WS2 Film Crystallinity Enhancement by Controlling Particle Energy with Target-Substrate Distance and Argon Pressure

〇Soma Ito1, kaede Teraoka1, Naoki Matsunaga1, Shinya Imai1, Hitoshi Wakabayashi1 (1. Tokyo Tech (Japan))
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