[H-6] Device-III

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[H-6-04] Layered NbS₂ Contacts Formed via H₂S Reaction with Nb for High Performance WSe₂-channel P-type Transistors

〇Koki Hori^1,2, Wen-Hsin Chang¹, Toshifumi Irisawa¹, Atsushi Ogura^2,3, Naoya Okada¹ (1. AIST (Japan), 2. Meiji Univ. (Japan), 3. MREL, Meiji Univ. (Japan))

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