2024 International Conference on Solid State Devices and Materials
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Session Details

Oral Presentation08: Low Dimensional Devices and Materials

[H-6]Device-III

Wed. Sep 4, 2024 10:45 AM - 11:45 AM JST
Wed. Sep 4, 2024 1:45 AM - 2:45 AM UTC
Room H (Small Hall)(2nd Floor)
Session Chair: Takamasa Kawanago (AIST), Yusuke Hoshi (Tokyo City Univ.)
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[H-6-01]Probing super-hydrophobic Cytop/MoS2 interface properties

〇Yuta Kono1, Tomonori Nishimura1, Kaito Kanahashi1, Shunto Arai2, Yasumitsu MIyata3, Kosuke Nagashio1 (1. the Univ. of Tokyo (Japan), 2. NIMS (Japan), 3. Tokyo Metropolitan Univ. (Japan))
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[H-6-02]Wrinkle-Free MoS2 Transistors with Improved Characteristic Variation Achieved by Vacuum Transfer

〇Yuan-Chun Eric Su1, Hsiang-Chi Hu1, Jian-Chen Tsai1, Chih-Yao Shih1, Wen-Hao Chang1,2 (1. National Yang Ming Chiao Tung Univ. (Taiwan), 2. Academia Sinica (Taiwan))
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[H-6-03]Band Modulation with Insulator Insertion between Ni and PVD-WS2 Films for P-type Contact

〇Kaede Teraoka1, Shinya Imai1, Naoki Matsunaga1, Keita Kurohara1, Soma Ito1, Kuniyuki Kakushima1, Hitoshi Wakabayashi1 (1. Tokyo Inst. of Tech. (Japan))
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[H-6-04]Layered NbS2 Contacts Formed via H2S Reaction with Nb for High Performance WSe2-channel P-type Transistors

〇Koki Hori1,2, Wen-Hsin Chang1, Toshifumi Irisawa1, Atsushi Ogura2,3, Naoya Okada1 (1. AIST (Japan), 2. Meiji Univ. (Japan), 3. MREL, Meiji Univ. (Japan))
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