[K-1] Oxide-TFTs I

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[K-1-02] Amorphous TeO₂ as P-type Wide-gap Oxide BEOL Semiconductor

〇John Robertson¹, Xuewei Zhang¹, Qingzhong Gui², Yuzheng Guo² (1. Cambridge Univ. (UK), 2. Wuhan Univ. (China))

DOI:

https://doi.org/10.7567/SSDM.2024.K-1-02

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