Session Details
[K-1]Oxide-TFTs I
Mon. Sep 2, 2024 2:15 PM - 4:00 PM JST
Mon. Sep 2, 2024 5:15 AM - 7:00 AM UTC
Mon. Sep 2, 2024 5:15 AM - 7:00 AM UTC
Room K (404)(4th Floor)
Session Chair: Mamoru Furuta (Kochi Univ. of Technology), Juan Paolo Bermundo (NAIST)
[K-1-01 (Invited)]Recent advances in oxide-TFT technology for next-generation sustainable electronics
〇Kenji Nomura1 (1. UC San Diego (United States of America))
[K-1-02]Amorphous TeO2 as P-type Wide-gap Oxide BEOL Semiconductor
〇John Robertson1, Xuewei Zhang1, Qingzhong Gui2, Yuzheng Guo2 (1. Cambridge Univ. (UK), 2. Wuhan Univ. (China))
[K-1-03]In/Ga Ratio and Annealing Temperature Influence on IGO Crystallization
〇Kuo Zhang1,2,3, Jiayi Wang1,3, Ziheng Bai3, Yang Xu1,3, Nannan You1,3, Yuxuan Li1,2,3, Ling Li2,3, Di Geng2,3, Shengkai Wang2,3 (1. High-Frequency High-Voltage Device and Integrated Circuits Research and Development Center, Instit. of Microelectronics, Chinese Academy of Sci. (China), 2. Univ. of Chinese Academy of Sci. (China), 3. Key Lab. of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sci. (China))
[K-1-04]"Enhancing Stability and Mobility in TFTs through Indium-Tungsten-Oxide and Indium-Gallium-Zinc-Oxide Heterojunction Engineering: Exploring ISFET Applicability"
〇Seong-Hwan Lim1, Dong-Gyun Mah1, Jin-Wook Shin2, Jong-Heon Yang2, Won-Ju Cho1 (1. The Univ. of Kwangwoon (Korea), 2. The Lab. of ETRI (Korea))
[K-1-05]Enhancement in Mobility and Stability in Thin Film Transistor Based on InPrO/InPrO Homojunction Structure
Min Guo1, 〇Xiaoci Liang1, Chuan Liu1 (1. Sun Yat-sen Univ. (China))
[K-1-06 (Late News)]Theoretical Study on Structural and Electronic Properties of Interstitial Oxygen Defects in Amorphous Indium Gallium Oxide for Transistor Reliability
〇Chitra Pandy1, Masaharu Kobayashi2 (1. The University of Tokyo (Japan), 2. The University of Tokyo (Japan))