[K-1] Oxide-TFTs I

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[K-1-03] In/Ga Ratio and Annealing Temperature Influence on IGO Crystallization

〇Kuo Zhang^1,2,3, Jiayi Wang^1,3, Ziheng Bai³, Yang Xu^1,3, Nannan You^1,3, Yuxuan Li^1,2,3, Ling Li^2,3, Di Geng^2,3, Shengkai Wang^2,3 (1. High-Frequency High-Voltage Device and Integrated Circuits Research and Development Center, Instit. of Microelectronics, Chinese Academy of Sci. (China), 2. Univ. of Chinese Academy of Sci. (China), 3. Key Lab. of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sci. (China))

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