Presentation Information
[K-1-03]In/Ga Ratio and Annealing Temperature Influence on IGO Crystallization
〇Kuo Zhang1,2,3, Jiayi Wang1,3, Ziheng Bai3, Yang Xu1,3, Nannan You1,3, Yuxuan Li1,2,3, Ling Li2,3, Di Geng2,3, Shengkai Wang2,3 (1. High-Frequency High-Voltage Device and Integrated Circuits Research and Development Center, Instit. of Microelectronics, Chinese Academy of Sci. (China), 2. Univ. of Chinese Academy of Sci. (China), 3. Key Lab. of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sci. (China))