[K-1] Oxide-TFTs I

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[K-1-06 (Late News)] Theoretical Study on Structural and Electronic Properties of Interstitial Oxygen Defects in Amorphous Indium Gallium Oxide for Transistor Reliability

〇Chitra Pandy¹, Masaharu Kobayashi² (1. The University of Tokyo (Japan), 2. The University of Tokyo (Japan))

DOI:

https://doi.org/10.7567/SSDM.2024.K-1-06

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