[K-2] Oxide-TFTs II

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[K-2-03] Insight into the Physical Origin of NBIS in ALD IGZO Transistors

〇Liankai Zheng¹, Yuyan Fan¹, Yulong Dong¹, Xiuyan Li¹, Mengwei Si¹ (1. Shanghai Jiao Tong Univ. (China))

DOI:

https://doi.org/10.7567/SSDM.2024.K-2-03

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