[K-2] Oxide-TFTs II | 2024 International Conference on Solid State Devices and Materials

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Session Details

Oral Presentation10: Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process

[K-2]Oxide-TFTs II

Mon. Sep 2, 2024 4:15 PM - 5:30 PM JST
Mon. Sep 2, 2024 7:15 AM - 8:30 AM UTC

Room K (404)(4th Floor)

Session Chair: Jun Koyama (Semiconductor Energy Lab.), Wenchang Yeh (Shimane Univ.)

4:15 PM - 4:45 PM JST(7:15 AM - 7:45 AM UTC)Invited

[K-2-01 (Invited)]High Mobility Thin film Transistors for Three Dimensional LSIsfabricated by ALD process

Takanori Takahashi¹, 〇Yukiharu Uraoka¹ (1. Nara Institute of Science and Technology (Japan))

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[K-2-02]PEALD IGZO TFT Implemented Inverters and Ring Oscillators Suitable for Backend-of-Line Functional Circuits

〇Wenhui Wang¹, Meishan Zhang¹, Jun Lan¹, Xuewei Feng², Panpan Zhang³, Kai Chen¹, Mei Shen¹, Feichi Zhou¹, Longyang Lin¹, Yida Li¹ (1. Southern University of Science and Technology (China), 2. Shanghai Jiao Tong University (China), 3. Beijing University of Posts and Telecommunications (China))

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[K-2-03]Insight into the Physical Origin of NBIS in ALD IGZO Transistors

〇Liankai Zheng¹, Yuyan Fan¹, Yulong Dong¹, Xiuyan Li¹, Mengwei Si¹ (1. Shanghai Jiao Tong Univ. (China))

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)

[K-2-04]In-situ AlOx Passivation on Extremely Thin 2-nm InOx FETs for Mobility and Stability Improvement

〇Chia-Tsong Chen¹, Wen Hsin Chang¹, Toshifumi Irisawa¹, Tatsuro Maeda¹ (1. AIST (Japan))

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