Presentation Information
[K-7-02]BEOL-Compatible In2O3 Ferroelectric Transistors by Sputtering with Maximum Mobility of 60 cm2/V×s and Memory Window of 3V
〇Zhao-Feng Lou1, Cheng-Hong Liu1, Che-Chuan Lee2, Kuan-Chou Buu2, Yii-Tay Chang1, Shu-Tong Chang3, Yu-De Lin4, Ming-Han Liao5, I-Chun Cheng2, Min-Hung Lee1 (1. Program for Semiconductor Devices, Materials, and Hetero-integration, Graduate School of Advanced Technology, National Taiwan Univ. (Taiwan), 2. Graduate Institute of Photonics and Optoelectronics, National Taiwan Univ. (Taiwan), 3. Department of Electrical Engineering, National Chung Hsing Univ. (Taiwan), 4. Electronic and Optoelectronic System Research Laboratories, Indus. Tech. Res. Inst. (Taiwan), 5. Department of Mechanical Engineering, National Taiwan Univ. (Taiwan))