Session Details
[K-7]Ferroelectric Materials and Late News
Wed. Sep 4, 2024 1:30 PM - 3:00 PM JST
Wed. Sep 4, 2024 4:30 AM - 6:00 AM UTC
Wed. Sep 4, 2024 4:30 AM - 6:00 AM UTC
Room K (404)(4th Floor)
Session Chair: Chih-Yu Chang (TSMC), Hiroyuki Nishinaka (Kyoto Inst. of Technology)
[K-7-01]An Ultra-thin Hf1-xZrxO2 (4nm) Processing for a Low Thermal Budget (350℃) but Promising Ferroelectricity
〇Chia-Wei Hsu1, Jia-Hua Jhang1, Zheng-Lin Yang1, Chih-Yu Teng1, Yuan-Chieh Tseng1 (1. National Yang Ming Chiao Tung Univ. (Taiwan))
[K-7-02]BEOL-Compatible In2O3 Ferroelectric Transistors by Sputtering with Maximum Mobility of 60 cm2/V×s and Memory Window of 3V
〇Zhao-Feng Lou1, Cheng-Hong Liu1, Che-Chuan Lee2, Kuan-Chou Buu2, Yii-Tay Chang1, Shu-Tong Chang3, Yu-De Lin4, Ming-Han Liao5, I-Chun Cheng2, Min-Hung Lee1 (1. Program for Semiconductor Devices, Materials, and Hetero-integration, Graduate School of Advanced Technology, National Taiwan Univ. (Taiwan), 2. Graduate Institute of Photonics and Optoelectronics, National Taiwan Univ. (Taiwan), 3. Department of Electrical Engineering, National Chung Hsing Univ. (Taiwan), 4. Electronic and Optoelectronic System Research Laboratories, Indus. Tech. Res. Inst. (Taiwan), 5. Department of Mechanical Engineering, National Taiwan Univ. (Taiwan))
[K-7-03]Comparison of Low-Frequency Noise Characteristics in Ferroelectric field-effect transistors for Two Opposite Gate Voltage Sweep Directions
〇Ciao-Fen Chen1,2, Dong-Ru Hsieh1, Tien-Sheng Chao1, Shun-Tsung Lo1,3, Yen-Fu Lin2 (1. The Univ. of Yang Ming Chiao Tung (Taiwan), 2. The Univ. of Chung Hsing (Taiwan), 3. Center for Emergent Functional Matter Science, The Univ. of Yang Ming Chiao Tung (Taiwan))
[K-7-04 (Late News)]Heterogeneous and monolithic complementary TFT consisting of an underlying n-ch top-gate poly-Si TFT and a upper p-ch double-gate poly-Ge TFT on a glass substrate
〇Yuto Ito1, Daiki Goshima1, Akito Kurihara1, Akito Hara1 (1. Tohoku Gakuin University (Japan))
[K-7-05 (Late News)]Effect of Channel Shape on the Electrical Performance of n-channel TFT on Solid-Phase Crystallized Polycrystalline Ge
〇Linyu Huang1, Atsuki Morimoto1, Kota Igura2, Takamitsu Ishiyama2, Kaoru Toko2, Dong Wang1, Keisuke Yamamoto1 (1. Kyushu Univ. (Japan), 2. Univ. of Tsukuba (Japan))
[K-7-06 (Late News)]Optimization of deposition conditions and Improvement of H2 gas sensor characteristics of porous a-IGZO by applying machine learning
〇Atsushi Shimizu1, Keisuke Ide1, Takayoshi Katase1, Hidenori Hiramatsu1, Hideo Hosono1, Toshio Kamiya1 (1. Tokyo Inst. of Tech. (Japan))