Presentation Information
[K-7-03]Comparison of Low-Frequency Noise Characteristics in Ferroelectric field-effect transistors for Two Opposite Gate Voltage Sweep Directions
〇Ciao-Fen Chen1,2, Dong-Ru Hsieh1, Tien-Sheng Chao1, Shun-Tsung Lo1,3, Yen-Fu Lin2 (1. The Univ. of Yang Ming Chiao Tung (Taiwan), 2. The Univ. of Chung Hsing (Taiwan), 3. Center for Emergent Functional Matter Science, The Univ. of Yang Ming Chiao Tung (Taiwan))