[M-4] Wide Bandgap Materials

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[M-4-02] Realization of GaN-Drain at Si (100) n-MOS with High Field Effect Mobility

〇Cheng-Jun Huang¹, Shuo Hwai², Tsai-Fu Chung¹, Chien-Nan Hsiao³, Edward. Yi Chang², Mau-Chung Frank Chang¹ (1. National Yang Ming Chiao Tung Univ. (Taiwan), 2. Univ. of California, Los Angeles (United States of America), 3. National Applied Res. Labs., Taiwan Instrument Res. Inst. (Taiwan))

Password required to view