[M-4] Wide Bandgap Materials | 2024 International Conference on Solid State Devices and Materials

Advanced Search

Session Details

Oral Presentation11: Advanced Materials: Synthesis / Crystal Growth / Characterization

[M-4]Wide Bandgap Materials

Tue. Sep 3, 2024 10:45 AM - 12:00 PM JST
Tue. Sep 3, 2024 1:45 AM - 3:00 AM UTC

Room M (Special Conference Room)(4th Floor)

Session Chair: Akihiko Kikuchi (Sophia Univ.), Yu-Lun Chueh (National Tsing‐Hua Univ.)

10:45 AM - 11:15 AM JST(1:45 AM - 2:15 AM UTC)Invited

[M-4-01 (Invited)]Metrology informatics on semiconductor
~ Multimodal analysis of gallium nitride as examples ~

〇Shigetaka Tomiya¹ (1. NAIST (Japan))

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[M-4-02]Realization of GaN-Drain at Si (100) n-MOS with High Field Effect Mobility

〇Cheng-Jun Huang¹, Shuo Hwai², Tsai-Fu Chung¹, Chien-Nan Hsiao³, Edward. Yi Chang², Mau-Chung Frank Chang¹ (1. National Yang Ming Chiao Tung Univ. (Taiwan), 2. Univ. of California, Los Angeles (United States of America), 3. National Applied Res. Labs., Taiwan Instrument Res. Inst. (Taiwan))

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[M-4-03]Effects of Al₂O₃/SiO₂ double layer mask on nanotrench etching of GaN by hydrogen environment anisotropic thermal etching (HEATE)

〇Shuya Sato¹, Yuki Takahashi¹, Tomoaki Momma¹, Akihiko Kikuchi^1,2,3 (1. Sophia Univ. (Japan), 2. Sophia Photonics Res. Center (Japan), 3. Sophia Semiconductor Research Inst. (Japan))

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[M-4-04]Improvement of Fabrication Process for Top-down GaN Nanowires Using Contactless Photo-assisted Electrochemical Etching

〇Hisahiro Furuuchi^1,2, Taketomo Sato², Junichi Motohisa^1,2 (1. Graduate School of Info. Sci. and Tech., Hokkaido Univ. (Japan), 2. Res. Center for Integrated Quantum Electronics, Hokkaido Univ. (Japan))

Back to Category List