[M-4] Wide Bandgap Materials

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[M-4-03] Effects of Al₂O₃/SiO₂ double layer mask on nanotrench etching of GaN by hydrogen environment anisotropic thermal etching (HEATE)

〇Shuya Sato¹, Yuki Takahashi¹, Tomoaki Momma¹, Akihiko Kikuchi^1,2,3 (1. Sophia Univ. (Japan), 2. Sophia Photonics Res. Center (Japan), 3. Sophia Semiconductor Research Inst. (Japan))

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