[N-4] Emerging Memory Devices, and DRAM

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[N-4-01] Single Transistor Memory with Long Retention Time and High Endurance at 300 K

Yi Han¹, 〇Jingxuan Sun¹, Jin-Hee Bae¹, Ionut Radu², Joachim Knoch³, Detlev Gruetzmacher¹, Qing-Tai Zhao¹ (1. Forschungszentrum Jülich GmbH (Germany), 2. SOITEC (France), 3. RWTH Aachen Univ. (Germany))

DOI:

https://doi.org/10.7567/SSDM.2024.N-4-01

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