Session Details
[N-4]Emerging Memory Devices, and DRAM
Tue. Sep 3, 2024 10:45 AM - 12:15 PM JST
Tue. Sep 3, 2024 1:45 AM - 3:15 AM UTC
Tue. Sep 3, 2024 1:45 AM - 3:15 AM UTC
Room N (Studio 1)(1st Floor)
Session Chair: Wein-Town Sun (eMemory Technology Inc.), Akiyoshi Seko (Micron Technology Inc.)
[N-4-01]Single Transistor Memory with Long Retention Time and High Endurance at 300 K
Yi Han1, 〇Jingxuan Sun1, Jin-Hee Bae1, Ionut Radu2, Joachim Knoch3, Detlev Gruetzmacher1, Qing-Tai Zhao1 (1. Forschungszentrum Jülich GmbH (Germany), 2. SOITEC (France), 3. RWTH Aachen Univ. (Germany))
[N-4-02]Ag/GeS/Ag Bidirectional Conductive-Bridge Selector with HighEndurance, Low Turn-Off Latency and Switching Variability
〇Asif Ali1, Haider Abbas2, Jiayi Li1, Diing Shenp Ang1 (1. Nanyang Technological University (Singapore), 2. Sejong University (Korea))
[N-4-03]"Enhancing Synaptic Performance through the Synergistic Effects of Indium Tungsten Oxide-based Electric Double Layer and Electrochemical Doping"
〇Dong-Gyun Mah1, Seong-Hwan Lim1, Jin-Wook Shin2, Jong-Heon Yang2, Won-Ju Cho1 (1. The Univ. of Kwangwoon (Korea), 2. The Lab. of ETRI (Korea))
[N-4-04]A Novel Logic-Process-Compatible Embedded Non-Volatile Memory for Display Driver IC (DDI) Applications
〇Hsueh Wei Chen1, Wei Ren Chen1, Wein Town Sun1, Cheng Yu Chung1, Chia Ming Hu1, Hung Yi Liao1, Chi Wei An1, Ching Yuan Lin1, Ming Chou Ho1 (1. eMemory Technology Inc. (Taiwan))
[N-4-05]Gate Oxide Technology Relieving Word-line Break in 10 nm-class DRAM
〇Taehoon Park1, Dongkyu Jang1, Inkyum Lee1, Jongkyu Kim1, Sang Bin Ahn1, Jieun Lee1, Shindeuk Kim1, Hyodong Ban1 (1. Samsung Electronics (Korea))
[N-4-06]Comprehensive analysis of Intermittent Single-bit Failure in 10 nm-class DRAM
〇Jieun Lee1, Donkyu Jang1, Hyon Namkung1, Sungwoon Choi1, Jinwon Jeong1, Sehoon Ko1, Taehoon Park1, Hyodong Ban1 (1. Samsung Electronics (Korea))