[N-4] Emerging Memory Devices, and DRAM

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[N-4-02] Ag/GeS/Ag Bidirectional Conductive-Bridge Selector with HighEndurance, Low Turn-Off Latency and Switching Variability

〇Asif Ali¹, Haider Abbas², Jiayi Li¹, Diing Shenp Ang¹ (1. Nanyang Technological University (Singapore), 2. Sejong University (Korea))

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