[N-4] Emerging Memory Devices, and DRAM

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[N-4-03] "Enhancing Synaptic Performance through the Synergistic Effects of Indium Tungsten Oxide-based Electric Double Layer and Electrochemical Doping"

〇Dong-Gyun Mah¹, Seong-Hwan Lim¹, Jin-Wook Shin², Jong-Heon Yang², Won-Ju Cho¹ (1. The Univ. of Kwangwoon (Korea), 2. The Lab. of ETRI (Korea))

DOI:

https://doi.org/10.7567/SSDM.2024.N-4-03

Password required to view