[N-4] Emerging Memory Devices, and DRAM

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[N-4-05] Gate Oxide Technology Relieving Word-line Break in 10 nm-class DRAM

〇Taehoon Park¹, Dongkyu Jang¹, Inkyum Lee¹, Jongkyu Kim¹, Sang Bin Ahn¹, Jieun Lee¹, Shindeuk Kim¹, Hyodong Ban¹ (1. Samsung Electronics (Korea))

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