[N-4] Emerging Memory Devices, and DRAM

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[N-4-06] Comprehensive analysis of Intermittent Single-bit Failure in 10 nm-class DRAM

〇Jieun Lee¹, Donkyu Jang¹, Hyon Namkung¹, Sungwoon Choi¹, Jinwon Jeong¹, Sehoon Ko¹, Taehoon Park¹, Hyodong Ban¹ (1. Samsung Electronics (Korea))

DOI:

https://doi.org/10.7567/SSDM.2024.N-4-06

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