[N-4] Emerging Memory Devices, and DRAM

12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[N-4-06] Comprehensive analysis of Intermittent Single-bit Failure in 10 nm-class DRAM

〇Jieun Lee¹, Donkyu Jang¹, Hyon Namkung¹, Sungwoon Choi¹, Jinwon Jeong¹, Sehoon Ko¹, Taehoon Park¹, Hyodong Ban¹ (1. Samsung Electronics (Korea))

Password required to view