Presentation Information
[PS-01-08]Interfacial Trap Density Investigation of HfO2-ZrO2 Superlattice Gate Stacks with Ultra-low Equivalent Oxide Thickness
〇kun zhong1,2,3, Zhaohao Zhang1,2,3, Siyuan Liu1,2,3, Yueyuan Zhang1,2,3, Huaxiang Yin1,2,3 (1. University of Chinese Academy of Sciences (China), 2. Institute of Microelectronics of the Chinese Academy of Sciences (China), 3. Integrated Circuit Advanced Process R&D Center and State Key Laboratory of Fabrication Technologies for Integrated Circuits (China))