[PS-11] 11: Advanced Materials: Synthesis / Crystal Growth / Characterization

[PS-11-11] Minority Carrier Distribution and Response at Inversion Bias Conditions in MOS Capacitor with Si/SiGe Multi-Quantum Well Structure

〇Noriyuki Taoka¹, Katsunori Makihara², Yuji Yamamoto³, Kentaro Yabashi¹, Satoshi Ohyama¹, Jialun Cai², Yusuke Ichino¹, Yoshiyuki Seike¹, Tatsuo Mori¹ (1. Aichi Institute of Technology (Japan), 2. Nagoya University (Japan), 3. IHP (Germany))

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