Presentation Information
[PS-11-11]Minority Carrier Distribution and Response at Inversion Bias Conditions in MOS Capacitor with Si/SiGe Multi-Quantum Well Structure
〇Noriyuki Taoka1, Katsunori Makihara2, Yuji Yamamoto3, Kentaro Yabashi1, Satoshi Ohyama1, Jialun Cai2, Yusuke Ichino1, Yoshiyuki Seike1, Tatsuo Mori1 (1. Aichi Institute of Technology (Japan), 2. Nagoya University (Japan), 3. IHP (Germany))