2024 International Conference on Solid State Devices and Materials
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Poster Session11: Advanced Materials: Synthesis / Crystal Growth / Characterization

[PS-11]11: Advanced Materials: Synthesis / Crystal Growth / Characterization

Tue. Sep 3, 2024 3:00 PM - 5:00 PM JST
Tue. Sep 3, 2024 6:00 AM - 8:00 AM UTC
Poster Hall (Exhibition Hall A)(1st Floor)

[PS-11-01]Analysis of inclined structure of threading screw dislocation in SiC using deep X-ray topography

〇Kotaro Ishiji1, Akio Yoneyama1, Isaho Kamata2, Fumihiro Fujie2 (1. SAGA Light Source (Japan), 2. Cen. Res. Inst. Elec. Power Indus. (Japan))

[PS-11-02]Defect Annihilation in Sn-Doped Ge Thin-Films on Insulator with High Carrier Mobility by Post-Annealing

〇Ryu Hashimoto1, Taishiro Koga1, Takaya Nagano1, Takashi Kajiwara1, Kenta Moto1, Keisuke Yamamoto1, Taizoh Sadoh1 (1. Kyushu Univ. (Japan))

[PS-11-03]Low-Temperature Reduction and N Doping of Graphene Oxide by Soft X-ray Irradiation and Atomic Hydrogen/Nitrogen

〇Misora Ueshimo1, Junichi Inamoto1, Yoshiaki Matsuo1, Kazuhiro Kanda1, Koji Sumitomo1, Akira Heya1 (1. The Univ. of Hyogo (Japan))

[PS-11-04]Thermal scanning probe lithography assisted broadband silicon photodetectors

yang Xu1, 〇Zongwen Li1, Zishun Li2, Qianqian Zhang1, Yunfei Xie1, Feng Tian1, Muhammad Abid Anwar1, Srikrishna Chanakya Bodepudi1, Zhi-Xiang Zhang1, Jian Chai1, Xiaorui Zheng2, Huan Hu1, Bin Yu1, Yang Xu1 (1. Zhejiang Univ. (China), 2. Westlake Univ. (China))

[PS-11-05]Nanographene Synthesis on Quartz Substrate by Polymerization of Pentacene and Dihydropentacene

〇Misaki Nakayama1, Koji Sumitomo1, Akira Heya1 (1. Univ. of Hyogo (Japan))

[PS-11-06]GeSn on Insulator Metal-Semiconductor-Metal PhotodetectorBy Layer Transfer Technique

〇Tatsuro Maeda1, Hiroyuki Ishii1, Wen Hsin Chang1, Komei Takagi2, Shigehisa Shibayama2, Masashi Kurosawa2, Osamu Nakatsuka2 (1. AIST (Japan), 2. Nagoya Univ. (Japan))

[PS-11-07]Theoretical Study on Structural Stability and Miscibility of ScAlN alloys: Effect of Lattice Constraints

〇Takuto Miyamoto1, Toru Akiyama1,2, Takahiro Kawamura1,2 (1. School of Engineering, Mie Univ. (Japan), 2. Innovation Center for Semiconductor and Digital Future, Mie Univ. (Japan))

[PS-11-08]Molecular Dynamics Simulation of Si-Cr-C Solutions:
The Effect of Al Addition on SiC Solution Growth

〇Takumi Fukunaga1, Ryo Iwasa1, Takahiro Kawamura1, Shota Seki2, Shunta Harada2, Toru Ujihara2 (1. The Univ. of Mie (Japan), 2. The Univ. of Nagoya (Japan))

[PS-11-09]Electronic Structures of the Interface in γ-Nb4N3/AlN Superlattice Structures

〇Tomoki Yamaguchi1, Takahiro Kawamura1, Toru Akiyama1, Atsushi Kobayashi2 (1. The Univ. of Mie (Japan), 2. The Univ. of Tokyo (Japan))

[PS-11-10]Structural Stability and Electronic Properties of (RhGa)2O3 and (RhAl)2O3 Alloys:A First-Principles Study

〇Kenta Matsubara1, Toru Akiyama1,2, Takahiro Kawamura1,2 (1. The Univ. of Mie (Japan), 2. Innovation Center for Semiconductor and Digital Future (Japan))

[PS-11-11]Minority Carrier Distribution and Response at Inversion Bias Conditions in MOS Capacitor with Si/SiGe Multi-Quantum Well Structure

〇Noriyuki Taoka1, Katsunori Makihara2, Yuji Yamamoto3, Kentaro Yabashi1, Satoshi Ohyama1, Jialun Cai2, Yusuke Ichino1, Yoshiyuki Seike1, Tatsuo Mori1 (1. Aichi Institute of Technology (Japan), 2. Nagoya University (Japan), 3. IHP (Germany))

[PS-11-12]Improved Polarization and Large Memory window of 3.8V Ferroelectric Hf0.5Zr0.5O2 Capacitor via IGZO Seeding Layer with Hydrogen Plasma Treatment.

Miao-Hua Hsiung1, 〇You-Chi Chen1, Ying-Tsan Tang1 (1. National Central University (Taiwan))
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