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Improved Polarization and Large Memory window of 3.8V Ferroelectric Hf0.5Zr0.5O2 Capacitor via IGZO Seeding Layer with Hydrogen Plasma Treatment.

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11: Advanced Materials: Synthesis / Crystal Growth / Characterization

2024 International Conference on Solid State Devices and Materials

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[PS-11-12]Improved Polarization and Large Memory window of 3.8V Ferroelectric Hf_0.5Zr_0.5O₂ Capacitor via IGZO Seeding Layer with Hydrogen Plasma Treatment.

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Presentation Information

[PS-11-12]Improved Polarization and Large Memory window of 3.8V Ferroelectric Hf0.5Zr0.5O2 Capacitor via IGZO Seeding Layer with Hydrogen Plasma Treatment.

Password required to view

[PS-11-12]Improved Polarization and Large Memory window of 3.8V Ferroelectric Hf_0.5Zr_0.5O₂ Capacitor via IGZO Seeding Layer with Hydrogen Plasma Treatment.