[SO-PS-02] 02: Advanced and Emerging Memories / New Applications

1:34 PM - 1:36 PM JST(4:34 AM - 4:36 AM UTC)

[SO-PS-02-03] Improved Memory Window and Endurance of FeFET using Laminated Thin Films and Fluorine Plasma Passivation for Analog Synaptic Characteristics

〇Kyungsoo Park¹, Chulwon Chung², Boncheol Ku¹, Seung Hyeon Yun¹, Junhyeok Park¹, Changhwan Choi¹ (1. Division of Materials Science and Engineering, Univ. of Hanyang (Korea), 2. Department of Energy Engineering, Univ. of Hanyang (Korea))

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