2024 International Conference on Solid State Devices and Materials
Advanced Search

Session Details

Short Oral Presentation02: Advanced and Emerging Memories / New Applications

[SO-PS-02]02: Advanced and Emerging Memories / New Applications

Tue. Sep 3, 2024 1:30 PM - 2:28 PM JST
Tue. Sep 3, 2024 4:30 AM - 5:28 AM UTC
Room B (408)(4th Floor)
Session Chair: Atsushi Himeno (Panasonic Holdings Corp.), Xu Bai (NanoBridge Semiconductor, Inc.)
1:30 PM - 1:32 PM JST(4:30 AM - 4:32 AM UTC)

[SO-PS-02-01]Ozone SiO2/HfO2 Interface Engineering for Performance and Reliability Optimization of Hf0.5Zr0.5O2 FeFETs: Device Integration and Electrical Investigation

〇Xueyang Li1, Yaxuan Yuan1, Chengji Jin2, Xinze Li1, Xiao Yu2, Ran Cheng1, Genquan Han3 (1. The Univ. of Zhejiang (China), 2. The Lab. of Zhejiang (China), 3. The Univ. of Xidian (China))
1:32 PM - 1:34 PM JST(4:32 AM - 4:34 AM UTC)

[SO-PS-02-02]Analysis of reliability improvement in HfO2-based ferroelectric capacitorsby ozone oxidation of the bottom electrode

〇Yuki Itoya1, Takuya Saraya1, Toshiro Hiramoto 1, Masaharu Kobayashi 1,2 (1. Univ. Tokyo Inst. Indus. Sci. (Japan), 2. Univ. Tokyo d.lab (Japan))
1:34 PM - 1:36 PM JST(4:34 AM - 4:36 AM UTC)

[SO-PS-02-03]Improved Memory Window and Endurance of FeFET using Laminated Thin Films and Fluorine Plasma Passivation for Analog Synaptic Characteristics

〇Kyungsoo Park1, Chulwon Chung2, Boncheol Ku1, Seung Hyeon Yun1, Junhyeok Park1, Changhwan Choi1 (1. Division of Materials Science and Engineering, Univ. of Hanyang (Korea), 2. Department of Energy Engineering, Univ. of Hanyang (Korea))
1:36 PM - 1:38 PM JST(4:36 AM - 4:38 AM UTC)

[SO-PS-02-04]Withdrawn

1:38 PM - 1:40 PM JST(4:38 AM - 4:40 AM UTC)

[SO-PS-02-05]Withdrawn

1:40 PM - 1:42 PM JST(4:40 AM - 4:42 AM UTC)

[SO-PS-02-06]New insight into memory window engineering in FeFET with oxide semiconductor

〇Zikang Yao1, Tianning Cui1, Danyang Chen1, Yulong Dong1, Zhiyu Lin1, Mengwei Si1, Xiuyan Li1 (1. Shanghai Jiao Tong Univ. (China))
1:42 PM - 1:44 PM JST(4:42 AM - 4:44 AM UTC)

[SO-PS-02-07]Comparative Study of Polysilicon and MoS2 Channel Based 3D NAND

〇Mohd Ashraf Lone1, Dibyadrasta Sahoo1, Imtiyaz Ahmad Khan1, Sanjeev Kumar Manhas1 (1. Indian Institute of Technology Roorkee (India))
1:44 PM - 1:46 PM JST(4:44 AM - 4:46 AM UTC)

[SO-PS-02-08]Disturbance Induced Refresh Time Lowering in Nanowire RFET 1T-DRAM Array

Rohit Kumar Nirala1, Manish Gupta2, 〇Abhinav Kranti1 (1. Indian Inst. of Tech. Indore (India), 2. Birla Inst. of Tech. and Sci., Pilani, K. K. Birla, Goa Campus (India))
1:46 PM - 1:48 PM JST(4:46 AM - 4:48 AM UTC)

[SO-PS-02-09]Nitrogen Incorporated Interlayer for Enhanced Hf-Zr-O Ferroelectric Tunnel Junctions in Ternary-Content-Addressable-Memory

〇Jaekyeong Kim1, Manh-Cuong Nguyen1,2, An Hoang-Thuy Nguyen1, Anh-Duy Nguyen1, Hyunsoo Kim1, Kyungsoo Hwang1, Geon Park1, Hoyeon Shin1, Siun Song1, Daewoong Kwon2, Rino Choi1 (1. Inha Univ. (Korea), 2. Hanyang Univ. (Korea))
1:48 PM - 1:50 PM JST(4:48 AM - 4:50 AM UTC)

[SO-PS-02-10]Guidelines for Achieving Optimal Classification Accuracy through Unsupervised Learning in Spiking Neural Network Using FeFETs-based Synapses

〇Chung-Li Chang1, Hao-Kai Peng1, Shun-Chi Wu1, Yung-Hsien Wu1 (1. National Tsing Hua Univ. (Taiwan))
1:50 PM - 1:52 PM JST(4:50 AM - 4:52 AM UTC)

[SO-PS-02-11]Analysis of Cell Characteristic using Back Oxide Trap Charge Effect in 3D-NAND Flash

Daewoong Kang1, 〇Chaeyeon Jung1,2, Minkyo Suh1,3, Gwansun Choi1,3, Youngho Jung4 (1. Seoul National University (Korea), 2. Soongsil University (Korea), 3. Chung-Ang University (Korea), 4. Daegu University (Korea))
1:52 PM - 1:54 PM JST(4:52 AM - 4:54 AM UTC)

[SO-PS-02-12]Analysis of Cell Characteristics depending on Vertical Channel Profile and Multiple Dielectric WL Spacer in 3D NAND Flash Memory

Daewoong Kang1, 〇Gwansun Choi1,2, Minkyo Suh1,2, Chaeyeon Jung1,3, Youngho Jung4 (1. Seoul National University (Korea), 2. Chung-Ang University (Korea), 3. Soongsil Univ. (Korea), 4. Daegu University (Korea))
1:54 PM - 1:56 PM JST(4:54 AM - 4:56 AM UTC)

[SO-PS-02-13]Investigation of Void Effect Inside Epi-plug on Electrical Characteristics of NAND Flash Memory

〇Dibyadrasta Sahoo1, Ankit Gaurav1, Mohd Ashraf Lone1, Sanjeev kumar Manhas1 (1. Indian Inst. of Tech. Roorkee (India))
1:56 PM - 1:58 PM JST(4:56 AM - 4:58 AM UTC)

[SO-PS-02-14]Fatigue Recovery and Endurance Improvement under Low Operating Voltage of HfZrO2/Ge MF(I)S Capacitor fabricated at BEOL-Compatible Temperature

〇Jai-Youn Jeong1,2, Kyeol Ko1, Kyunghwan Kim1, Changhwan Shin2, Jae-Hoon Han1 (1. The Korea Inst. of Science and Technology (KIST) (Korea), 2. The Korea Univ. (Korea))
1:58 PM - 2:00 PM JST(4:58 AM - 5:00 AM UTC)

[SO-PS-02-15]Unipolar RRAM Cells Enabled by Hetero-Complex-Oxide Stack for Ultra-Speed Multilevel Programming

〇Jun-Peng Lee1, Chun-Chien Chiu4, Yu-Wei Chen1, Bo-Cheng Chen2, I-Ling Li3, Yu-Ting Wang2, Zhih-Yun Kuo3, Ning-Yuan Lue1, Jan-Chi Yang4, Chao-Hui Yeh1,2,3 (1. Inst. of Electronics Engineering, National Tsing Hua Univ. (Taiwan), 2. Department of Electrical Engineering, National Tsing Hua Univ., (Taiwan), 3. College of Semiconductor Research, National Tsing Hua Univ. (Taiwan), 4. Department of Physics, National Cheng Kung Univ. (Taiwan))
2:00 PM - 2:02 PM JST(5:00 AM - 5:02 AM UTC)

[SO-PS-02-16]Withdrawn

2:02 PM - 2:04 PM JST(5:02 AM - 5:04 AM UTC)

[SO-PS-02-17]TiOx/TaOx-Based Optoelectronic Neuro-synaptic ReRAM Device

〇Saransh Shrivastava1, Jhih-Ling Guo1, Hans Juliano1, Tseung-Yuen Tseng1 (1. Inst. of Electronics, National Yang Ming Chiao Tung Univ. (NYCU), Hsinchu 30010, Taiwan (Taiwan))
2:04 PM - 2:06 PM JST(5:04 AM - 5:06 AM UTC)

[SO-PS-02-18]High Performance BEoL-Compatible FeRAM with Robust Endurance >109 Cycles by Two Pr > 32 uC/cm2 HfZrO2 Ferroelectric Film and CAAC-IGZO as Low Leakage Transistor

〇Hiroshi Yoshida1, Min-Hung Lee2, Shang-Shiun Chuang1, Chuan-Hua Chang1, Wen-Hsiang Hsieh1, Yung-Lung Hsu1, Shih-Chi Yen1, Zong-Han Li2, Fu-Sheng Chang2, Ming-Han Liao3, Shou-Zen Chang1 (1. Powerchip Semiconductor Manufacturing Corporation (Taiwan), 2. Graduate School of Advanced Technology, National Taiwan University (Taiwan), 3. Graduate School of Advanced Technology and Department of Mechanical Engineering, National Taiwan University (Taiwan))
2:06 PM - 2:08 PM JST(5:06 AM - 5:08 AM UTC)

[SO-PS-02-19]Si-Te-N-O amorphous chalcogenide for selector device with high thermal stability

〇Kentaro Saito1, Shogo Hatayama1, Yuta Saito1,2 (1. The Inst. of AIST (Japan), 2. The Univ. of Tohoku (Japan))
2:08 PM - 2:10 PM JST(5:08 AM - 5:10 AM UTC)

[SO-PS-02-20]Analysis of Intermediate State in MgO-based MTJ Switching

〇Chihiro Watanabe1, Yuya Miyazaki1, Junichi Tsuchimoto2, Hiroyuki Hosoya3, Kazuto Yamanaka3, Yoshiteru Amemiya2, Akinobu Teramoto1,2,4 (1. Grad. Sch. of Adv. Sci. and Eng., Hiroshima Univ. (Japan), 2. Res. Inst. for Semiconductor Eng., Hiroshima Univ. (Japan), 3. CANON ANELVA Corp. (Japan), 4. Res. Inst. for Synchrotron Radiation Sci., Hiroshima Univ. (Japan))
2:10 PM - 2:12 PM JST(5:10 AM - 5:12 AM UTC)

[SO-PS-02-21]Improving the TER by Incorporating Antiferroelectric HZO Layer in 5 nm Thin MFM FTJ

〇Geon Park1, ManhCuong Nguyen1, AnHoang Nguyen1, AnhDuy Nguyen1, Hyunsoo Kim1, Kyungsoo Hwang1, Jaekyeong Kim1, Hoyeon Shin1, Siun Song1, Rino Choi1 (1. Inha Univ. (Korea))
2:12 PM - 2:14 PM JST(5:12 AM - 5:14 AM UTC)

[SO-PS-02-22]Comparative Study on Transistor Structures for IGZO-Based FeTFTs

〇He Young Kang1, Seung Hee Cha1, Jae Kyeong Jeong1 (1. Hanyang University (Korea))
2:14 PM - 2:16 PM JST(5:14 AM - 5:16 AM UTC)

[SO-PS-02-23]Improving switching uniformity through nitrogen doping in CMOS process-compatible Ta2O5-based ReRAM device

〇youna kwon1, Won-Chul Lee1, Gapseop Sim1, Woo-Suk Sul1, Jongwon Lee2 (1. The Inst. of NNFC (Korea), 2. Univ. of Chungnam (Korea))
2:16 PM - 2:18 PM JST(5:16 AM - 5:18 AM UTC)

[SO-PS-02-24]Time dependance changes of interface states in Nb-doped SrTiO3/Pt ReRAM

〇Yumeng Zheng1, Tomohiro Ishii1, Kentaro Kinoshita1 (1. Tokyo univ. of science (Japan))
2:18 PM - 2:20 PM JST(5:18 AM - 5:20 AM UTC)

[SO-PS-02-25]HfO2-ZrO2 Superlattice Ferroelectric FinFET with Low-Temperature Poly-Siusing Green Laser Crystallization for BEOL applications

〇Chen-You Wei1、Yung-Teng Fang2、Yi-Ju Yao1、Chih-Chao Yang3、Fu-Ju Hou3、Guang-Li Luo3、Yung-Hsien Wu2、Yung-Chun Wu2 (1. College of Semiconductor Research, National Tsing Hua University (Taiwan)、2. Department of Engineering and System Science, National Tsing Hua University (Taiwan)、3. Taiwan Semiconductor Research Institute (Taiwan))
2:20 PM - 2:22 PM JST(5:20 AM - 5:22 AM UTC)

[SO-PS-02-26]Multibit P-type Fe-GAAFETs Utilizing HfO2/ZrO2 Superlattice Dielectric and SiGe/Si Superlattice Channel with Record Characteristics via Quantum Mechanisms for High-Density 1T NVM Applications

〇Yi Ju Yao1、Tsai Jung Lin1、Bo Xu Chen2、Chen You Wei1、Yung Teng Fang2、Heng Jia Chang2、Yu Min Fu1、Guang Li Luo3、Fu Ju Hou3、Yung Chun Wu1,2 (1. College of Semiconductor Research, National Tsing Hua University (Taiwan)、2. Department of Engineering and System Science, National Tsing Hua University (Taiwan)、3. Taiwan Semiconductor Research Institute (Taiwan))
2:22 PM - 2:24 PM JST(5:22 AM - 5:24 AM UTC)Late News

[SO-PS-02-27 (Late News)]Mott Transition Switching Phenomenon of Carbon-doped HfOx Thin Film and Application to CeRAM

〇Masamichi Azuma1,2, Mamoru Ikeda1, Tsubasa Miyamoto1, Hiroyuki Nishinaka1 (1. Kyoto Institute of Technology (Japan), 2. Symetrix Corp. (United States of America))
2:24 PM - 2:26 PM JST(5:24 AM - 5:26 AM UTC)Late News

[SO-PS-02-28 (Late News)]Experimental Implementation of 4-bit Carry Lookahead Adder in Memristor Crossbar Array using Threshold Logic

〇Sangwook Youn1, Jinwoo Park1, Hyungjin Kim1 (1. Hanyang University (Korea))
2:26 PM - 2:28 PM JST(5:26 AM - 5:28 AM UTC)Late News

[SO-PS-02-29 (Late News)]"Correlation between fundamental properties and current density in perovskite oxide resistance change memory Pt/Nb:SrTiO3"

〇Ryosuke Ohtani1, Yumeng Zheng1, Kentaro Kinoshita1 (1. Tokyo Univ. of Sci. (Japan))
Back to Category List